RPS

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Product Overview

Microwave RPS
(Remote Plasma System)

Sub-Fab. Safety Enhancement and by-product Removal System

    • High References
    • Specify range power (1~3KW )
    • High usability (high output and various reactivity enables
      reactions such as NF3 and O2, H2O)

Specification

Content Description User Scope
(HOOCK UP)
Model TCTMW-R3  
Treatment type Microwave Plasma  
Application Etch, Diffusion, CVD Process  
Interface RS485, Signal  
Operation type Automatic (PLC base TOUCH screen)  
Dimension (W×D×H, mm) 630×1,208×1,517  
Weight (kg) 85kg  
Power 3-Phase, 220 ±10% VAC, 50/60㎐
Main Circuit Breaker /
Max. Power Consumption /		 O
InletPort ISO 160 (Or Option)  
Ar 2 LPM 1/4” VCR Male O
NF3 3 LPM 1/4” VCR Male O
PCW 20~30 LPM (4~5 kg/cm2) 3/8”, Swagelok O
Ar 30~200 LPM (4~5 kg/cm2) 1/4”, Swagelok O

Gas processing process

Sub-Fab. Safety Enhancement and by-product Removal System

    • WN process : By-Product W or WN
      W or WN + F* → WFx + N2
    • HARP USG process : by-product SiO2
      SiO2 + F* → SiFx + O2
    • ALD CVD Nitride : By-Product Si(NH2)4 or Si3N4
      Si(NH2)4 or Si3N4 + F* → SiF4 (g) + NH4F2 (s)
    • ALD TiCl4 TiN : By-Product TiN
      TiCl4 + NH3 + F*/O*+ NF*→ TiF4(s) + NH4F(g) + TiO2 (s)+ N2 + HCl(g)
    • ALD ZrO2 : CpZr or TEMAZ condensation(Safety issue)
      CpZr[(N(CH3)2)3] + O* → ZrO2 + N2 + H2 + CO2 + H2O
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